High Electron Mobility Transistor (HEMT)

A High Electron Mobility Transistor (HEMT) is a type of transistor that allows electrical current to flow very quickly, thanks to its unique design using different materials. Unlike traditional transistors, HEMTs use a layered structure of semiconductors, which creates a high-speed channel for electrons. This results in faster switching speeds and improved efficiency, making HEMTs ideal for high-frequency applications, such as in telecommunications and satellite systems. They are particularly valued for their performance in amplifying signals and processing data, helping to power modern electronic devices and technologies.