Indium Gallium Arsenide (InGaAs)

Indium Gallium Arsenide (InGaAs) is a semiconductor material made from indium, gallium, and arsenic atoms. It is valued for its ability to detect and amplify light in the near-infrared spectrum, making it useful in telecommunications, night vision, and scientific instruments. Unlike silicon, InGaAs can sense specific wavelengths of light that silicon cannot, offering high sensitivity and fast response times. Its unique properties enable precise applications in fiber-optic communication and imaging technologies, making it an essential material in fields requiring advanced light detection and signal processing.