AlGaN/GaN HEMT

An AlGaN/GaN HEMT (High Electron Mobility Transistor) is a type of high-performance electronic switch that uses special materials—aluminum gallium nitride (AlGaN) and gallium nitride (GaN)—to efficiently control electrical power and signals. It enables fast switching and operates at high voltages and temperatures, making it ideal for applications like radar, satellite communications, and high-power amplifiers. The design leverages a unique layer structure to allow electrons to move quickly with minimal energy loss, offering superior speed, efficiency, and durability compared to traditional transistors.