HEMT

A High Electron Mobility Transistor (HEMT) is a type of transistor designed for high-speed and high-frequency applications. It uses a special structure called a heterojunction, where two different semiconductor materials are layered to create a very thin, high-conductivity channel for electrons. This setup allows electrons to move smoothly and rapidly with minimal resistance, making HEMTs ideal for advanced communication systems, radar, and satellite technology. Essentially, HEMTs are powerful, efficient switches that can operate at radio and microwave frequencies, enabling fast data transfer and high-performance electronic devices.