MBE (Molecular Beam Epitaxy)

Molecular Beam Epitaxy (MBE) is a precise technology used to grow thin layers of materials, typically semiconductors, one atom or molecule at a time. In a vacuum chamber, beams of atoms or molecules are directed onto a substrate where they condense and form a uniform layer. This method allows for highly controlled compositions and structures, essential for developing advanced electronic and optical devices, such as lasers and transistors. MBE is crucial in research and the semiconductor industry for creating materials with specific properties at the nanoscale.