STT-MRAM (Spin-Transfer Torque Magnetoresistive Random Access Memory)

STT-MRAM (Spin-Transfer Torque Magnetoresistive Random Access Memory) is a type of non-volatile memory technology that stores data using tiny magnetic elements. It works by passing a current that aligns the magnetic orientation of a bit, representing a 0 or 1. Unlike traditional memory, it retains data without power, offers high speed, durability, and low power consumption. STT-MRAM combines magnetic storage with electronic switching, making it efficient and reliable for future computing devices, from smartphones to data centers.