RRAM (Resistive Random Access Memory)

Resistive Random Access Memory (RRAM) is a type of non-volatile data storage technology that uses a material’s electrical resistance to store information. When a small voltage is applied, the material's resistance changes between high and low states, representing binary data (0s and 1s). These states are stable even without power, enabling quick data access and high endurance. RRAM offers advantages like faster speeds, lower power consumption, and greater durability compared to traditional memory types, making it promising for future high-performance, energy-efficient electronic devices.