Molecular Beam Epitaxy (MBE)

Molecular Beam Epitaxy (MBE) is a precise method used to grow very thin, high-quality layers of materials, typically semiconductors, on a surface. In MBE, evaporated atoms or molecules are directed in a vacuum environment onto a heated substrate. These particles then settle and form a crystalline layer with atomic-level control, allowing for the fabrication of advanced electronic and optical devices. MBE's accuracy enables scientists to create complex structures with tailored properties, essential for cutting-edge technologies like quantum computing and high-speed transistors.