Kyropoulos process

The Kyropoulos process is a method used to grow high-quality single crystal ingots, mainly for semiconductors like silicon. It involves melting a large amount of polycrystalline material in a crucible and then carefully cooling it so a single crystal begins to form at the melt's surface. A seed crystal is gradually pulled upward while the temperature is controlled, allowing the crystal to grow slowly and uniformly. This technique produces large, pure, and defect-free crystals essential for electronic devices, combining slow cooling with controlled growth conditions to achieve high purity and structural integrity.