High electron mobility transistors (HEMTs)

High Electron Mobility Transistors (HEMTs) are advanced electronic components that efficiently control electrical signals at very high speeds. They use special materials, like gallium nitride and aluminum gallium nitride, layered together to create a path where electrons can move incredibly quickly with minimal resistance. This allows HEMTs to amplify signals and switch operations rapidly, making them ideal for high-frequency applications such as radar, satellite communications, and cell phone base stations. Their design results in higher performance, greater efficiency, and better power handling compared to traditional transistors, enabling faster and more reliable electronic systems.