High electron mobility transistors (HEMT)

High Electron Mobility Transistors (HEMTs) are advanced electronic components that use a special layered structure to allow electrons to move very quickly and efficiently. They combine different semiconductor materials to create a channel with minimal resistance, enabling high-speed and high-frequency performance. HEMTs are widely used in applications like satellite communications, radar, and cell phone base stations because they offer superior power, speed, and efficiency compared to traditional transistors. Their design reduces energy loss, making electronic devices faster and more reliable at handling high-frequency signals.