Doping Concentration

Doping concentration refers to the amount of impurity atoms added to a semiconductor material, like silicon, to change its electrical properties. These impurities, called dopants, are introduced in controlled amounts to either increase the number of free electrons (n-type) or holes (p-type) within the material. The concentration, usually measured in atoms per cubic centimeter, determines how well the semiconductor conducts electricity. A higher doping concentration results in increased electrical conductivity, enabling better control of current flow in electronic devices such as transistors and integrated circuits.