AlGaN/GaN HEMT (High Electron Mobility Transistor)

An AlGaN/GaN HEMT (High Electron Mobility Transistor) is a specialized electronic switch made from materials called Aluminum Gallium Nitride (AlGaN) and Gallium Nitride (GaN). It efficiently controls high-power and high-frequency signals by enabling electrons to move quickly through a very thin layer, creating a high-speed and low-loss pathway. These transistors are widely used in radar, satellite communications, and power electronics because of their ability to handle extreme voltages, generate less heat, and operate at higher frequencies than traditional silicon-based transistors.